The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Feb. 11, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhan Bae, Hwaseong-si, KR;

Chang-Kyung Seong, Yongin-si, KR;

Jongshin Shin, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/16 (2006.01);
U.S. Cl.
CPC ...
G05F 3/16 (2013.01);
Abstract

A semiconductor device includes a voltage generator generating a reference voltage, a first reference current generator receiving the reference voltage and generating a reference current, a non-volatile memory storing a calibration code, a first bias current generator mirroring the reference current to generate a first bias current, and a second bias current generator adjusting the reference current according to the calibration code of the non-volatile memory to generate a second bias current.


Find Patent Forward Citations

Bae, Junhan. (2020). Semiconductor device including non-volatile memory, a bias current generator and an on-chip termination resistor, method of fabricating the same and method of operating the same (U.S. Patent No. 10845837). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10845837

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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