The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
May. 17, 2019
Applicant:
Dynax Semiconductor Inc., Kunshan, CN;
Inventors:
Assignee:
DYNAX SEMICONDUCTOR, INC., Kunshan, CN;
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 23/544 (2006.01); H01L 21/66 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2644 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 22/34 (2013.01); H01L 23/544 (2013.01); H01L 27/0207 (2013.01); H01L 29/41 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01);
Abstract
The present disclosure provides a semiconductor device and a method of manufacturing the same, and relates to the field of semiconductor devices. The semiconductor device includes an active region, a test region and a passive region located outside the active region and the test region, wherein a standard device is formed in the active region, and a test device for testing performance parameters of the standard device is formed in the test region.