The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Sep. 19, 2018
Texas Instruments Incorporated, Dallas, TX (US);
Roy Alan Hastings, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A sectioned field effect transistor ('FET') for implementing a rapidly changing sense range ratio dynamically in response to changing load and main supply conditions. The sectioned FET may have multiple main FET sections, and multiple sense FET sections. These sections can be dynamically connected and disconnected from the sectioned FET. The sections may also be connected by a common gate. There may also be common drain or source connections for the main FET sections, and also common drain or source connections for the sense FET sections. The sectioned FET allows for the sense range to be extended by a multiple of k+1, where k is the size ratio or factor of the additional sense FET sections. This allows the current sense range ratio to be extended to (m+n)/n*(k+1).