The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Mar. 02, 2017
Applicants:
Waseda University, Tokyo, JP;
Yokogawa Electric Corporation, Tokyo, JP;
Inventors:
Hiroshi Kawarada, Tokyo, JP;
Masafumi Inaba, Tokyo, JP;
Mohd Sukri Shaili Falina Binti, Tokyo, JP;
Takuro Naramura, Tokyo, JP;
Keisuke Igarashi, Tokyo, JP;
Yukihiro Shintani, Tokyo, JP;
Kotaro Ogawa, Tokyo, JP;
Assignees:
WASEDA UNIVERSITY, Tokyo, JP;
YOKOGAWA ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 27/30 (2006.01); G01N 27/333 (2006.01); G01N 27/416 (2006.01);
U.S. Cl.
CPC ...
G01N 27/301 (2013.01); G01N 27/30 (2013.01); G01N 27/302 (2013.01); G01N 27/308 (2013.01); G01N 27/333 (2013.01); G01N 27/414 (2013.01); G01N 27/4148 (2013.01); G01N 27/4161 (2013.01); H01L 2924/13073 (2013.01);
Abstract
An electronic component includes a field effect transistor that functions as a working electrode of an ion sensor and a driving circuit that causes a potential difference between a source electrode and a drain electrode of the field effect transistor. A reference electrode potential of the field effect transistor is fixed.