The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jul. 10, 2017
Canon Anelva Corporation, Kawasaki, JP;
Yoshiaki Daigo, Kawasaki, JP;
Keiji Ishibashi, Kawasaki, JP;
CANON ANELVA CORPORATION, Kawasaki, JP;
Abstract
The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α-AlOsubstrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the α-AlOsubstrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the α-AlOsubstrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.