The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Apr. 25, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

David C. Smith, Lake Oswego, OR (US);

Dennis M. Hausmann, Lake Oswego, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B60P 3/34 (2006.01); B60J 7/16 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
B60P 3/341 (2013.01); B60J 7/1621 (2013.01); B60J 7/1657 (2013.01); C23C 16/45534 (2013.01); C23C 16/45548 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01); B60Y 2200/14 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01);
Abstract

Methods and systems for conformality modulation of metal oxide films in atomic layer deposition (ALD) are provided. Some example methods use chemical inhibition. An example system for performing such a method comprises a chamber; a source of precursor gas; a source of inhibiting precursor gas; one or more injectors having respective gas flow paths, each having an inlet connectable to the source of the precursor or the inhibiting precursor gas, and being adapted to deliver into the chamber, separately or in conjunction with another injector, precursor gas at a first gaseous flow rate in a first region of the plurality of regions to form a first film at a first deposition rate, and being adapted to deliver inhibiting precursor gas at a second gaseous flow rate in the same or a second region of the plurality of regions to inhibit growth of the first film.


Find Patent Forward Citations

Loading…