The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Aug. 18, 2017
Applicant:

Nokia Solutions and Networks Oy, Espoo, FI;

Inventors:

Guilhem de Valicourt, Jersey City, NJ (US);

Michael S. Eggleston, New York, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01S 5/10 (2006.01); H01S 5/30 (2006.01); G02F 1/313 (2006.01); H01S 5/065 (2006.01); H01S 5/125 (2006.01); H01S 5/14 (2006.01); H01S 3/106 (2006.01); H01S 3/105 (2006.01); H01S 5/02 (2006.01); H01S 3/107 (2006.01); H01S 5/0625 (2006.01); H01S 5/026 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0657 (2013.01); G02B 6/12004 (2013.01); G02F 1/3136 (2013.01); H01S 3/105 (2013.01); H01S 3/106 (2013.01); H01S 5/1003 (2013.01); H01S 5/1007 (2013.01); H01S 5/1025 (2013.01); H01S 5/1039 (2013.01); H01S 5/125 (2013.01); H01S 5/141 (2013.01); H01S 5/3013 (2013.01); G02B 2006/12145 (2013.01); G02B 2006/12159 (2013.01); H01S 3/107 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/06256 (2013.01);
Abstract

A mode-locked semiconductor laser capable of changing the spacing between the carrier frequencies of its output comb. In an example embodiment, the mode-locked semiconductor laser is implemented as a hybrid solid-state device comprising a III-V semiconductor chip and a silicon chip attached to one another to form a laser cavity. The III-V semiconductor chip includes a gain medium configured to generate light in response to being electrically and/or optically pumped. The silicon chip includes a plurality of optical waveguides arranged to provide multiple optical paths of different effective lengths for the light generated in the laser cavity. Different optical paths can be controllably selected, using one or more optical switches connected between the optical waveguides, to change the effective optical length of the laser cavity and, as a result, the output-comb frequency spacing. In some embodiments, the output-comb frequency spacing can be changeable at least by a factor of 1.5.


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