The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Mar. 26, 2018
Applicant:

Ushio Denki Kabushiki Kaisha, Tokyo, JP;

Inventors:

Masato Hagimoto, Tokyo, JP;

Susumu Sorimachi, Tokyo, JP;

Tomonobu Tsuchiya, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/024 (2006.01); H01S 5/30 (2006.01); H01S 5/02 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02469 (2013.01); H01S 5/0218 (2013.01); H01S 5/02476 (2013.01); H01S 5/3013 (2013.01); H01S 5/0216 (2013.01); H01S 5/02212 (2013.01); H01S 5/02272 (2013.01); H01S 5/02276 (2013.01);
Abstract

Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.


Find Patent Forward Citations

Loading…