The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Jul. 31, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yoshiaki Sonobe, Yokohama, JP;
Yoshinobu Nakatani, Yokohama, JP;
Abstract
Provided are a magnetic tunnel junction device and a magnetic resistance memory device which are capable of both reducing a write current and increasing a write speed. The magnetic tunnel junction device includes a free layer having a first magnetization direction that is changeable, a pinned layer that is configured to maintain a second magnetization direction in a predetermined direction, and an insulating layer between the free layer and the pinned layer. The free layer includes a first free layer having perpendicular magnetic anisotropy and high polarizability, and a second free layer that is antiferromagnetic-coupled to the first free layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile