The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
May. 28, 2019
Applicant:
Vuereal Inc., Waterloo, CA;
Inventors:
Jian Yin, Waterloo, CA;
Dayan Ban, Waterloo, CA;
Ehsanollah Fathi, Waterloo, CA;
Gholamreza Chaji, Waterloo, CA;
Assignee:
VueReal Inc., Waterloo, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/02 (2010.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/025 (2013.01); H01L 33/145 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01);
Abstract
The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer, an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.
Quick Actions:
Yin, Jian. (2020). Enhanced efficiency of led structure with n-doped quantum barriers (U.S. Patent No. 10840408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10840408
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile