The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Dec. 16, 2019
Infineon Technologies Austria Ag, Villach, AT;
Gilberto Curatola, Villach, AT;
Oliver Haeberlen, St. Magdalen, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes a heterojunction semiconductor body including a first and second type III-V semiconductor layers with different bandgaps such that a first two-dimensional charge carrier gas forms at an interface between the two layers. The second type III-V semiconductor layer includes a thicker section and a thinner section. A first input-output electrode is on the thicker section and is in ohmic contact with the first two-dimensional charge carrier gas. A second input-output electrode is formed on the thinner section and is in ohmic contact with the first two-dimensional charge carrier gas. A gate structure is formed on the thinner section and is configured to control a conductive connection between the first and second input-output electrodes. The gate structure is laterally spaced apart from a transition between the thicker and thinner sections of the second type III-V semiconductor layer.