The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Nov. 01, 2019
Applicant:
Chih-jen Huang, Hsinchu, TW;
Inventor:
Chih-Jen Huang, Hsinchu, TW;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/7786 (2013.01);
Abstract
A semiconductor structure for a wide bandgap normally off MOSFET has a III-group nitride, a V-group nitride, or a high K material trapping layer disposed under a gate electrode. Through the FN tunneling effect or channel hot electron (CHE) effect, multiple electrons are trapped by the trapping layer and kept in the trapping layer. The electrons in the trapping layer deplete the two-dimensional electron gas (2DEG) below the trapping layer, and then the 2DEG below the gate electrode disappear.