The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Jan. 16, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Krishna Kumar Bhuwalka, Suwon-si, KR;

Seong-Je Kim, Gwacheon-si, KR;

Jong-Chol Kim, Seoul, KR;

Hyun-Woo Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); B82Y 10/00 (2011.01); H01L 29/775 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); B82Y 10/00 (2013.01); H01L 21/823412 (2013.01); H01L 21/823456 (2013.01); H01L 29/0673 (2013.01); H01L 29/1037 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.


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