The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Mar. 29, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Dhishan Kande, Dallas, TX (US);

Ye Shao, Plano, TX (US);

David Curran, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/033 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 27/06 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/32053 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 27/0629 (2013.01); H01L 27/0635 (2013.01); H01L 28/60 (2013.01);
Abstract

An integrated circuit (IC) includes a substrate with a semiconductor surface layer including functional circuitry having a plurality of interconnected transistors including a dielectric layer thereon with a metal stack including a plurality of metal levels over the dielectric layer. A thin film resistor (TFR) layer including at least one metal is within the metal stack. At least one capacitor is within the metal stack including a capacitor dielectric layer over a metal bottom plate formed from one of the metal levels. The capacitor top plate is formed from the TFR layer on the capacitor dielectric layer and there is at least one resistor lateral to the capacitor formed from the same TFR layer.


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