The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

May. 30, 2019
Applicant:

Cambrios Film Solutions Corporation, Tortola, VG;

Inventors:

Chung-Chin Hsiao, Zhubei, TW;

Siou-Cheng Lien, Toufen, TW;

Chia-Yang Tsai, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/041 (2006.01); H01L 27/12 (2006.01); H05K 1/09 (2006.01); H05K 3/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1262 (2013.01); G06F 3/0412 (2013.01); H01L 27/124 (2013.01); H05K 1/09 (2013.01); H05K 3/06 (2013.01); G06F 2203/04103 (2013.01); H05K 2201/0326 (2013.01);
Abstract

A patterning process for forming a double-sided electrode structure includes: providing a substrate having two opposite surfaces, wherein a first photo-sensitive layer and a second photo-sensitive layer are respectively formed on the opposite surfaces; forming a first metal nanowire layer on the first photo-sensitive layer and a second metal nanowire layer on the second photo-sensitive layer; and performing a double-sided lithography process. The lithography process includes: performing an exposure process to define a removing area and a remaining area on both of the first and the second photo-sensitive layers; and removing the first and second photo-sensitive layers and the first and second metal nanowire layers in the defined removing areas by a developer solution, thereby patterning the first and second metal nanowire layers.


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