The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Dec. 15, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyung Yub Jeon, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method for manufacturing a semiconductor is provided. A first oxide layer is formed on a substrate. A first nitride layer is formed on the first oxide layer. A second oxide layer, a second nitride layer are formed on the first nitride layer. A polysilicon layer is formed on the second nitride layer. A third nitride layer is formed on the polysilicon layer. One or more first patterns are formed on the third nitride layer. The one or more first patterns are transferred to the polysilicon layer to form one or more patterned polysilicon layer. A portion of the first oxide layer, first nitride layer, second oxide layer, and second nitride layer are removed using the one or more patterned polysilicon layer as a first mask.