The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Dec. 07, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Geum Jung Seong, Seoul, KR;

Seung Soo Hong, Incheon, KR;

Young Mook Oh, Hwaseoung-si, KR;

Jeong Yun Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/28123 (2013.01); H01L 21/76805 (2013.01); H01L 21/76829 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/4983 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a field insulating layer on the substrate, the field insulating layer wrapping a side wall of the fin type pattern, a gate electrode on the fin type pattern, the gate electrode extending in a second direction intersecting with the first direction, a first spacer on a side wall of a lower part of the gate electrode, and an etching stop layer extending along a side wall and an upper surface of an upper part of the gate electrode, along a side wall of the first spacer, and along an upper surface of the field insulating layer.


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