The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Oct. 24, 2017
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Bastien Letowski, Vallouise, FR;

Julie Widiez, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/492 (2006.01); H01L 21/306 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4878 (2013.01); H01L 21/306 (2013.01); H01L 23/492 (2013.01); H01L 31/18 (2013.01);
Abstract

A process for fabricating at least one elementary heterostructure includes producing a heterostructure comprising at least one semiconductor structure of resistivity higher than or equal to 1 Ω.cm located between two electrically conductive structures of resistivity lower than or equal to 0.1 Ω.cm; cutting the heterostructure by electrical discharge machining so as to define at least the elementary heterostructure; the thickness of the semiconductor structure being smaller than about 1/10th of the thickness of at least one of the electrically conductive structures or of the total thickness of the electrically conductive structures.


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