The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Dec. 27, 2018
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Kiyohiko Maeda, Toyama, JP;

Masato Terasaki, Toyama, JP;

Yasuhiro Megawa, Toyama, JP;

Takahiro Miyakura, Toyama, JP;

Akito Hirano, Toyama, JP;

Takashi Nakagawa, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01); C23C 16/24 (2006.01); C23C 16/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02667 (2013.01); C23C 16/06 (2013.01); C23C 16/24 (2013.01); C23C 16/455 (2013.01); C23C 16/46 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/02645 (2013.01);
Abstract

There is provided a technique that includes: (a) forming a silicon germanium film in an amorphous state so as to embed an inside of a recess formed on a surface of a substrate, by supplying a first silicon-containing gas and a germanium-containing gas to the substrate at a first temperature; (b) raising a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature; and (c) forming a silicon film on the silicon germanium film by supplying a second silicon-containing gas to the substrate at the second temperature, wherein in (c), the silicon germanium film as a base of the silicon film is crystallized while the silicon film is formed.


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