The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Mar. 13, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Tomoko Araya, Fujisawa, JP;

Mitsuaki Honma, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 29/52 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01); G11C 16/02 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G11C 11/5642 (2013.01); G11C 16/02 (2013.01); G11C 16/0483 (2013.01); G11C 16/06 (2013.01); G11C 29/52 (2013.01);
Abstract

According to one embodiment, a memory device, includes a first memory cell, and a second memory cell adjacent to the first memory cell; and a sequencer configured to, when data is read from the first memory cell: perform a first read operation on the second memory cell; perform a second read operation on the first memory cell; perform a third read operation on the first memory cell by applying a voltage different from that applied in the second read operation to a gate of the second memory cell; and generate first data stored in the first memory cell and second data for correcting the first data, based on results of the first to third read operations.


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