The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Feb. 25, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Tatsuo Ogura, Yokkaichi Mie, JP;

Hideto Horii, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); H01L 27/11582 (2017.01); G11C 8/14 (2006.01); H01L 27/1157 (2017.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 8/14 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor memory device includes a plurality of memory cells, a plurality of word lines connected to the plurality of memory cells, respectively, and a row control circuit. The row control circuit is configured to apply a program voltage to a first word line among the word lines while stepping up a value of the program voltage; apply a first pass voltage to a second word line among the word lines different from the first word line when applying the program voltage having a voltage value equal to or greater than a predetermined voltage value to the first word line; and apply a second pass voltage having a voltage value higher than the first pass voltage to the second word line when applying the program voltage having a voltage value less than the predetermined voltage value to the first word line.


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