The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Oct. 23, 2019
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Hyung Dong Lee, Suwon, KR;

Tae Hoon Kim, Seongnam, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/15 (2013.01); G11C 2213/72 (2013.01);
Abstract

A semiconductor memory includes bit lines, word lines, memory cells coupled between the bit lines and the word lines, and a sensing circuit configured to sense a state of a selected memory cell. During a read operation of the selected memory cell, the electronic device is configured to precharge a selected word line to a first voltage, to precharge an unselected word line to a second voltage, to float the selected word line and the unselected word line, to apply a bit line voltage a selected bit line, to adjust a voltage level of the unselected word line using a first leakage current that flows between an unselected bit line and the unselected word line, to couple the selected word line and the unselected word line to the sensing circuit, and to compare a voltage level of the selected word line with the voltage level of the unselected word line.


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