The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Aug. 27, 2019
Kneron (Taiwan) Co., Ltd., Taipei, TW;
Yuan Du, Los Angeles, CA (US);
Mingzhe Jiang, San Diego, CA (US);
Junjie Su, San Diego, CA (US);
Chun-Chen Liu, San Diego, CA (US);
Kneron (Taiwan) Co., Ltd., Taipei, TW;
Abstract
A memory cell includes a first charge trap transistor and a second charge trap transistor. The first charge trap transistor has a substrate, a first terminal coupled to a first bitline, a second terminal coupled to a signal line, a control terminal coupled to a wordline, and a dielectric layer formed between the substrate of the first charge trap transistor and the control terminal of the first charge trap transistor. The second charge trap transistor has a substrate, a first terminal coupled to the signal line, a second terminal coupled to a second bitline, a control terminal coupled to the wordline, and a dielectric layer between the substrate of the second charge trap transistor and the control terminal of the second charge trap transistor. Charges are either trapped to or detrapped from the dielectric layer of the first charge trap transistor when writing data to the memory cell.