The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jul. 03, 2019
Applicant:
Skorpios Technologies, Inc., Albuquerque, NM (US);
Inventors:
John Y. Spann, Albuquerque, NM (US);
John Zyskind, Albuquerque, NM (US);
Assignee:
Skorpios Technologies, Inc., Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3072 (2013.01); H01S 5/3054 (2013.01); H01S 5/3063 (2013.01); H01S 5/3013 (2013.01); H01S 5/3018 (2013.01); H01S 5/3059 (2013.01); H01S 5/323 (2013.01); H01S 5/343 (2013.01);
Abstract
A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.