The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Dec. 18, 2017
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Martin Müller, Bernhardswald, DE;

Hubert Halbritter, Dietfurt, DE;

Assignee:

OSRAM OLED GMBH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/022 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/40 (2006.01); H01S 5/024 (2006.01); H01S 5/30 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02272 (2013.01); H01S 5/0226 (2013.01); H01S 5/0428 (2013.01); H01S 5/04254 (2019.08); H01S 5/04257 (2019.08); H01S 5/2022 (2013.01); H01S 5/4031 (2013.01); H01S 5/02469 (2013.01); H01S 5/3095 (2013.01); H01S 5/323 (2013.01);
Abstract

A surface-mountable semiconductor laser and an arrangement with such a semiconductor laser are disclosed. In one embodiment, the semiconductor laser is includes a semiconductor layer sequence having at least one generation region between a p-side and an n-side, at least two contact surfaces for external electrical contacting of the p-side and the n-side, wherein the contact surfaces are located on the same side of the semiconductor layer sequence in a common plane so that the semiconductor laser are contactable without bonding wires, at least one of a plurality of conductor rails extending from a side with the contact surfaces across the semiconductor layer sequence and a plurality of through-connections running at least through the generation region, wherein the generation region is configured to be pulse operated with time-wise current densities of at least 30 A/mm.


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