The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jan. 02, 2019
International Business Machines Corporation, Armonk, NY (US);
John Collins, Tarrytown, NY (US);
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
John Papalia, New York, NY (US);
Robert Bruce, White Plains, NY (US);
Adele L. Pacquette, Elmsford, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a semiconductor includes forming at least one trench in a silicon substrate. The at least one trench provides an energy storage device containment feature. An electrical and ionic insulating layer(s) is formed on a top surface of the substrate and sidewalls of the trench. A plurality of vias is formed through a base of the trench. The plurality of vias is filled with a metal material. A trench base current collector at the base of the trench and backside current collector at the backside of the substrate are formed from the metal material. These current collectors enable electric and thermal conductive planarization and device isolation through the substrate. A plurality of energy storage device layers is formed over the trench base current collector, and a topside current collector is formed over the plurality of energy storage device layers. A protective encapsulation layer may then be formed.