The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Mar. 08, 2017
Forschungszentrum Juelich Gmbh, Juelich, DE;
Alexey Yakushenko, Aachen, DE;
Riccardo Funari, Naples, IT;
Kay Johannes Krause, Hueckelhoven, DE;
Jan Hendrik Schnitker, Krefeld, DE;
Dirk Mayer, Frechen, DE;
Nouran Yehia Adly Hassan, Munich, DE;
Andreas Offenhaeusser, Aachen, DE;
FORSCHUNGSZENTRUM JUELICH GMBH, Juelich, DE;
Abstract
A method for producing a memory cell includes providing a non-conductive substrate, mounting a first conductor track made of conductive material on the non-conductive substrate, mounting a porous dielectric with or without redox-active molecules in a form of points on the first conductor track, and mounting a second conductor track orthogonally to the first conductor track, wherein the first and second conductor tracks have an electrode function at their intersection point, and wherein the porous dielectric is arranged between the electrodes. The method further includes mounting a passivation layer on the substrate, the first conductor track, the dielectric, and the second conductor track, so that the conductor track remains contactable. The first and the second conductor track form a memory at their intersection point with the dielectric arranged between them, in which the redox reaction of the redox-active molecules is configured to be driven by a voltage.