The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Sep. 18, 2017
Applicants:

Centre National DE LA Recherche Scientifique, Paris, FR;

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Gilles Gaudin, Le Sappey en Chartreuse, FR;

Ioan Mihai Miron, Grenoble, FR;

Alexandru Trifu, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.


Find Patent Forward Citations

Gaudin, Gilles. (2020). Magnetic memory cell of current programming type (U.S. Patent No. 10833249). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10833249

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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