The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Sep. 18, 2017
Applicants:
Centre National DE LA Recherche Scientifique, Paris, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Gilles Gaudin, Le Sappey en Chartreuse, FR;
Ioan Mihai Miron, Grenoble, FR;
Alexandru Trifu, Grenoble, FR;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.