The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Dec. 27, 2017
Applicant:

Hitachi Metals, Ltd., Minato-ku, Tokyo, JP;

Inventors:

Naoto Fukatani, Tokyo, JP;

Akinori Nishide, Tokyo, JP;

Yosuke Kurosaki, Tokyo, JP;

Shin Yabuuchi, Tokyo, JP;

Jyun Hayakawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/22 (2006.01); H01L 35/32 (2006.01); B22F 9/04 (2006.01); C22C 30/00 (2006.01); C22C 33/02 (2006.01); C22C 38/02 (2006.01); C22C 38/06 (2006.01); C22C 38/14 (2006.01);
U.S. Cl.
CPC ...
H01L 35/22 (2013.01); B22F 9/04 (2013.01); C22C 30/00 (2013.01); C22C 33/02 (2013.01); C22C 38/02 (2013.01); C22C 38/06 (2013.01); C22C 38/14 (2013.01); H01L 35/32 (2013.01); B22F 2009/041 (2013.01); B22F 2301/35 (2013.01);
Abstract

Provided are a p-type thermoelectric conversion material, a thermoelectric conversion module, and a method of manufacturing a p-type thermoelectric conversion material that are capable of obtaining high thermoelectric conversion characteristics. The p-type thermoelectric conversion material has a full Heusler alloy having a composition represented by the following General Formula (1) and has a relative density of 85% or more, FeTiMAMB. . . (1), wherein in Formula (1), MA is one element selected from the group consisting of Si, Sn, and Ge, MB is one element selected from the group consisting of Al, Ga, and In, and x, y, a, and b are numbers set so that x+y+a+b=100, a+b=z, 50<x≤52.5, 20≤y≤24.5, 24.5≤z≤29, a>0, and b>0 in atom %, respectively.


Find Patent Forward Citations

Loading…