The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Aug. 10, 2017
Applicant:

The Penn State Research Foundation, University Park, PA (US);

Inventors:

Shizhuo Yin, State College, PA (US);

Chang-Jiang Chen, State College, PA (US);

Ju-Hung Chao, State College, PA (US);

Wenbin Zhu, State College, PA (US);

Assignee:

The Penn State Research Foundation, University Park, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/20 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); H01L 33/60 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/305 (2013.01); H01L 33/325 (2013.01); H01L 33/60 (2013.01); H01L 33/007 (2013.01); H01L 33/0008 (2013.01); H01L 33/0093 (2020.05); H01L 33/46 (2013.01);
Abstract

A light-emitting diode, comprising a substrate that has a first surface and an opposing second surface. A reflection layer is disposed on the first surface of the substrate and a light-emitting diode structure is arranged on the second surface of the substrate. The light-emitting diode structure includes a first semiconducting layer, an active layer and a second semiconducting layer disposed consecutively on the second surface. A plurality of protruding asymmetric micro-structured elements define at least a part of the second surface of the substrate such that at least a portion of a surface of each micro-structured element is disposed at an obtuse angle to the first surface of the substrate when measured from within the respective micro-structured element. The first semiconducting layer and the second semiconducting layer respectively have a first electrode and a second electrode.


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