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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10833220 B1

PDFFull Text
Date of Patent:
Nov. 10, 2020

Filed:

Apr. 29, 2019

Micro light emitting diode device

Applicant:

Playnitride Inc., Tainan, TW;

Inventors:

Yu-Yun Lo, Tainan, TW;

Tzu-Yang Lin, Tainan, TW;

Yu-Hung Lai, Tainan, TW;

Assignee:

PlayNitride Inc., Tainan, TW;

Attorney:

JCIPRNET

Primary Examiner:

Selim U Ahmed

Assistant Examiner:

Evan G Clinton

Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/00 (2010.01); H01L 25/16 (2006.01); H01L 33/58 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 33/52 (2010.01); H01L 27/15 (2006.01); H01L 21/78 (2006.01); H01L 25/075 (2006.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 21/7806 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 27/15 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01); H01L 33/44 (2013.01); H01L 33/52 (2013.01); H01L 33/58 (2013.01); H01L 27/156 (2013.01);
Abstract

A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.

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