Tft substrate having compensation capacitance unit for change in capacitance formed between gate electrode and drain electrode

Abstract

The TFT substrate has a plurality of pixels and a plurality of TFTs (). The TFT substrate includes a first conductive layer () including a gate electrode () of the TFT, a gate insulating layer (), a semiconductor layer (), a protective insulating layer () including a portion covering a channel region () and having a first opening portion () reaching the drain electrode () and a second opening portion () reaching the drain region (), and a second conductive layer () including a source electrode () and a drain electrode (). Each of the plurality of pixels has a compensation capacitance unit (), the first conductive layer further includes a first electrode unit () electrically connected to the gate electrode and forming a compensation capacitance unit, and the second conductive layer further includes a second electrode unit () electrically connected to the drain electrode, overlapping the first electrode unit, and forming a compensation capacitance unit. The protective insulating layer further includes a third opening portion () which does not overlap the semiconductor layer and which includes a first portion () overlapping the first electrode unit and the second electrode unit, and a second portion () which is adjacent to the first portion in a direction (Da) from the second opening portion to the first opening portion and which does not overlap the first electrode unit and/or the second electrode unit.