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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10833185 B1

PDFFull Text
Date of Patent:
Nov. 10, 2020

Filed:

Aug. 15, 2017

Heterojunction semiconductor device having source and drain pads with improved current crowding

Applicant:

Delta Electronics, Inc., Taoyuan, TW;

Inventors:

Wen-Chia Liao, Taoyuan, TW;

Ying-Chen Liu, Taoyuan, TW;

Chen-Ting Chiang, Taoyuan, TW;

Assignee:

DELTA ELECTRONICS, INC., Taoyuan, TW;

Attorney:

CKC & Partners Co., LLC

Primary Examiner:

Matthew E Gordon

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 23/495 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/535 (2006.01); H01L 23/528 (2006.01); H01L 29/423 (2006.01); H01L 23/522 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/49537 (2013.01); H01L 23/49541 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 24/06 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H01L 29/4236 (2013.01); H01L 29/7786 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 29/1066 (2013.01); H01L 29/42376 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05093 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/49111 (2013.01); H01L 2924/00 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10344 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/13064 (2013.01);
Abstract

A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, a source pad, a drain pad, and a source external connecting element. The source electrode, the drain electrode, and the gate electrode are disposed on an active region of the active layer. The source pad is electrically connected to the source electrode and includes a body portion, a plurality of branch portions, and a current diffusion portion. The body portion is at least partially disposed on the active region of the active layer. The current diffusion portion interconnects the body portion and the branch portions. A width of the current diffusion portion is greater than a width of the branch portion and less than a half of a width of the body portion. The source external connecting element is disposed on the body portion and spaced from the current diffusion portion.

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