The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Oct. 11, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Yi Song, Albany, NY (US);
Junli Wang, Slingerlands, NY (US);
Chi-Chun Liu, Altamont, NY (US);
Liying Jiang, Guilderland, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 21/306 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 21/308 (2013.01); H01L 21/30617 (2013.01); H01L 29/0847 (2013.01); H01L 29/205 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01);
Abstract
Semiconductor devices and methods of forming the same include forming a doped drain structure having a first conductivity type on sidewalls of an intrinsic channel layer. An opening is etched in a middle of the channel layer. A doped source structure is formed having a second conductivity type in the opening of the channel layer.