The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jul. 13, 2017
Rohm Co., Ltd., Kyoto, JP;
Kenji Yamamoto, Kyoto, JP;
Masatoshi Aketa, Kyoto, JP;
Hirokazu Asahara, Kyoto, JP;
Takashi Nakamura, Kyoto, JP;
Takuji Hosoi, Osaka, JP;
Heiji Watanabe, Osaka, JP;
Takayoshi Shimura, Osaka, JP;
Shuji Azumo, Nirasaki, JP;
Yusaku Kashiwagi, Nirasaki, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiOlayer and a high-k layer on the base SiOlayer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.