The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jul. 11, 2018
International Business Machines Corporation, Armonk, NY (US);
Martin M. Frank, Dobbs Ferry, NY (US);
Kam-Leung Lee, New York, NY (US);
Eduard A. Cartier, New York, NY (US);
Vijay Narayanan, New York, NY (US);
Jean Fompeyrine, Waedenswil, CH;
Stefan Abel, Zürich, CH;
Oleg Gluschenkov, Tannersville, NY (US);
Hemanth Jagannathan, Niskayuna, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for converting a dielectric material including a type IV transition metal into a crystalline material that includes forming a predominantly non-crystalline dielectric material including the type IV transition metal on a supporting substrate as a component of an electrical device having a scale of microscale or less; and converting the predominantly non-crystalline dielectric material including the type IV transition metal to a crystalline crystal structure by exposure to energy for durations of less than 100 milliseconds and, in some instances, less than 10 microseconds. The resultant material is fully or partially crystallized and contains a metastable ferroelectric phase such as the polar orthorhombic phase of space group Pca2or Pmn2. During the conversion to the crystalline crystal structure, adjacently positioned components of the electrical devices are not damaged.