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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10833095 B1

PDFFull Text
Date of Patent:
Nov. 10, 2020

Filed:

Jan. 24, 2019

Single poly non-volatile memory device, method of manufacturing the same and single poly non-volatile memory device array

Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Su Jin Kim, Cheonan-si, KR;

Hye Jin Yoo, Sejong, KR;

Assignee:

MagnaChip Semiconductor, Ltd., Cheongju-si, KR;

Attorney:

NSIP Law

Primary Examiner:

Muna A Techane

Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11558 (2017.01); H01L 27/11524 (2017.01); H01L 29/788 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11558 (2013.01); G11C 16/0408 (2013.01); G11C 16/0433 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); H01L 27/11524 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01); G11C 2216/10 (2013.01);
Abstract

A single poly non-volatile memory device that includes: a first type lower well; first and second wells separately formed in an upper portion of the first type lower well; a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the first well. A control gate is formed in an upper portion of the second well with separated on an opposite side of the source electrode from the first well and connected to the gate of the sensing transistor.

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Kim, Su. (2020). Single poly non-volatile memory device, method of manufacturing the same and single poly non-volatile memory device array (U.S. Patent No. 10833095). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10833095

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