The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10833080 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 10, 2020

Filed:

Jul. 13, 2017
Applicant:

Hyperion Semiconductors Oy, Helsinki, FI;

Inventor:

Artto Aurola, Helsinki, FI;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/085 (2006.01); H01L 27/098 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/12 (2006.01); H03K 19/003 (2006.01); H03K 19/0952 (2006.01); H03K 19/20 (2006.01); H03K 19/094 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823807 (2013.01); H01L 27/0207 (2013.01); H01L 27/085 (2013.01); H01L 27/098 (2013.01); H01L 27/1203 (2013.01); H03K 19/003 (2013.01); H03K 19/094 (2013.01); H03K 19/0952 (2013.01); H03K 19/20 (2013.01);
Abstract

Disclosed is a semiconductor logic element having a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries with the described logic element.


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