The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Feb. 27, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Daniel J. Buvid, Rochester, MN (US);

Eric J. Campbell, Rochester, MN (US);

Sarah K. Czaplewski, Rochester, MN (US);

Christopher W. Steffen, Rochester, MN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/00 (2006.01); H05K 1/11 (2006.01); H05K 3/10 (2006.01); H05K 3/18 (2006.01); H01L 21/20 (2006.01); H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/16235 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15313 (2013.01);
Abstract

A method of forming an interconnect that includes providing a sacrificial trace structure using an additive forming method. The sacrificial trace structure having a geometry for the interconnect. The method continuous with forming a continuous seed metal layer on the sacrificial trace structure; and removing the sacrificial trace structure, wherein the continuous seed metal layer remains. An interconnect metal layer may be formed on the continuous seed layer. A dielectric material may then be formed on the interconnect metal layer to encapsulate a majority of the interconnect metal layer, wherein ends of the interconnect metal layer are exposed through one surface of the dielectric material to provide an interconnect extending into a dielectric material.


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