The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Feb. 14, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Hoon-Sung Choi, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 27/1207 (2013.01);
Abstract
A semiconductor comprises two transistors of the first conductivity type separated from two transistors of a second conductivity type by a first element isolation layer. Further, the two transistors of the first conductivity type are separated from each other by a second element isolation layer and the two transistors of the second conductivity type are separated from each other by a third element isolation layer. In example embodiments, the second and third element isolation layers are shallower than the first element isolation layer.