The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Aug. 29, 2019
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Nariaki Tanaka, Kiyosu, JP;
Toru Oka, Kiyosu, JP;
Yukihisa Ueno, Kiyosu, JP;
Kota Yasunishi, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu, JP;
Abstract
An n-type GaN layer, a p-type diffusion region formed by ion implantation and annealing in a part of the n-type layer, and a Schottky electrode are formed on the n-type layer. A region without the p-type region is defined as region A, and a region with the p-type region is defined as region B. In region A, an average density of each electron trap level of the n-type layer in a region having a depth of 0.8 μm to 1.6 μm on the n-type layer side is set so as to satisfy the predetermined conditions. In region B, an average density of each carrier trap level of the n-type layer in a region having a depth of 0.8 μm to 1.6 μm on the n-type layer side from a boundary between the n-type layer and the p-type diffusion region is set so as to satisfy the predetermined conditions.