The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Dec. 05, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Kazuhide Sumiyoshi, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A low pressure chemical vapor deposition (LPCVD) technique for nitride semiconductor materials includes steps of: setting a temperature in a furnace to be 750 to 900° C.; substituting an atmosphere in the furnace to ammonia (NH); depositing a SiN film at an initial pressure by supplying di-chloro-silane (SiHCl); and subsequently depositing the SiN film at a deposition pressure that is higher than the initial pressure. The invention has a feature that the initial pressure is at least higher than 60% of the deposition pressure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile