The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Aug. 01, 2017
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Puneet Gupta, Los Angeles, CA (US);
Andrew S. Pan, Los Angeles, CA (US);
Shaodi Wang, Los Angeles, CA (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/5614 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2213/15 (2013.01); G11C 2213/74 (2013.01); G11C 2213/76 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract
A random access memory (RAM) includes a bit-line, a source-line, a memory cell connected to the bit-line and the source-line, and a read/write circuit connected to the bit-line and the source-line and including a negative differential resistance (NDR) device.