The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Dec. 28, 2016
Applicants:

Konica Minolta, Inc., Tokyo, JP;

Tohoku University, Miyagi, JP;

Inventors:

Kousuke Fujiwara, Miyagi, JP;

Mikihiko Oogane, Miyagi, JP;

Yasuo Ando, Miyagi, JP;

Junichi Jono, Tokyo, JP;

Takashi Terauchi, Tokyo, JP;

Assignees:

KONICA MINOLTA, INC., Tokyo, JP;

TOHOKU UNIVERSITY, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); G01R 33/02 (2006.01); H01L 43/08 (2006.01); G01R 33/10 (2006.01); A61B 5/04 (2006.01); G01R 33/00 (2006.01);
U.S. Cl.
CPC ...
G01R 33/098 (2013.01); A61B 5/04005 (2013.01); G01R 33/0029 (2013.01); G01R 33/02 (2013.01); G01R 33/09 (2013.01); G01R 33/093 (2013.01); G01R 33/10 (2013.01); H01L 43/08 (2013.01); A61B 2562/0223 (2013.01);
Abstract

There are provided: an element arrayincluding a plurality of tunnel magnetoresistive elementsrespectively having a fixed magnetic layera free magnetic layerand an insulation layerprovided between the fixed magnetic layerand the free magnetic layerthe elements respectively for varying the tunnel resistance of the insulation layerby influence of an external magnetic field; and an electric circuitthat applies a voltage to a plurality of the tunnel magnetoresistive elementsforming the element arraywith the voltage to be applied to each tunnel magnetoresistive element being equal to or higher than 0.1 mV and equal to or lower than 50 mV.


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