The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Apr. 24, 2015
United Technologies Corporation, Farmington, CT (US);
Michael G. McCaffrey, Windsor, CT (US);
Jeffrey M. Wittman, Wells, ME (US);
Dilip M. Shah, Glastonbury, CT (US);
Alan D. Cetel, West Hartford, CT (US);
Timothy M. Davis, Kennebunk, ME (US);
Mark J. Rogers, Kennebunk, ME (US);
RAYTHEON TECHNOLOGIES CORPORATION, Farmington, CT (US);
Abstract
The present disclosure relates to advanced materials, particularly single crystal grain structures including the formation of single crystal grain structures. Single crystal grain structures offer improved mechanical properties when used with individual components. Improving mechanical properties is favorable for components that are used in applications with high temperature, pressure, and stress. In these applications, mechanical failure is extremely undesirable. Individual components, such as seals, can be designed with a single crystal grain structure in a preferred direction. By selecting a preferred direction, and orienting the single crystal grain structure accordingly, the single crystal grain structure can improve the component's mechanical properties. Single crystal grain structure seals and the method of forming the seals, therefore, offer various improvements to individual components, specifically when the components are designed for high temperature, pressure, and stress applications.