The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jun. 28, 2016
Applicant:
Sabic Global Technologies B.v., Bergen op Zoom, NL;
Inventors:
Ihab N. Odeh, Sugar Land, TX (US);
Nitin Chopra, Sugar Land, TX (US);
Saad Al-Hussain, Sugar Land, TX (US);
Assignee:
SABIC GLOBAL TECHNOLOGIES B.V., Bergen op Zoom, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08J 7/06 (2006.01); B32B 27/00 (2006.01); B01J 21/08 (2006.01); B01J 23/06 (2006.01); B01J 23/42 (2006.01); B01J 31/06 (2006.01); B01J 35/00 (2006.01); B01J 37/34 (2006.01); C08K 3/08 (2006.01); C08K 3/22 (2006.01); C08K 3/36 (2006.01); C10G 35/06 (2006.01); B82Y 40/00 (2011.01); H01M 2/16 (2006.01);
U.S. Cl.
CPC ...
C08J 7/06 (2013.01); B01J 21/08 (2013.01); B01J 23/06 (2013.01); B01J 23/42 (2013.01); B01J 31/06 (2013.01); B01J 35/0006 (2013.01); B01J 35/0013 (2013.01); B01J 35/0033 (2013.01); B01J 37/348 (2013.01); B32B 27/00 (2013.01); C08K 3/08 (2013.01); C08K 3/22 (2013.01); C08K 3/36 (2013.01); C10G 35/06 (2013.01); B82Y 40/00 (2013.01); C08J 2369/00 (2013.01); C08J 2379/08 (2013.01); C08K 2003/2296 (2013.01); C08K 2201/001 (2013.01); C08K 2201/011 (2013.01); C10G 2300/708 (2013.01); H01M 2/166 (2013.01);
Abstract
Disclosed is a method for making a material having supported micro- and/or nanostructures, the method includes (a) obtaining a substrate comprising a precursor material and an electrically conductive layer of micro- or nanostructures embedded into at least a portion of a first surface of the substrate, and (b) applying a voltage across the electrically conductive layer to heat the micro- or nanostructures, wherein the heat converts the precursor material into micro- and/or nanostructures.