The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Apr. 23, 2020
Yi-chung Chou, Taipei, TW;
Chih-yuan Kuo, New Taipei, TW;
Dong-shan Chen, Hsinchu County, TW;
ITE Tech. Inc., Hsinchu, TW;
Abstract
A gate driving circuit for providing a high driving voltage includes a first N-type high-voltage transistor and a second N-type high-voltage transistor connected in series between a driving voltage output node and a system low-voltage source. A voltage difference between a system high-voltage source and the system low-voltage source is greater than a withstand voltage of the first or second N-type high-voltage transistor. When the driving voltage output node is to output a system high voltage, the first N-type high-voltage transistor and the second N-type high-voltage transistor are turned off. Deep N-type well regions of the first N-type high-voltage transistor and the second N-type high-voltage transistor are applied with a first bias voltage. A voltage difference between the first bias voltage and the system low-voltage source is smaller than an interface breakdown voltage between the deep N-type well region and a P-type well region of the second N-type high-voltage transistor.