The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Apr. 16, 2020
Nxp B.v., Eindhoven, NL;
Kenneth Chung Yin Kwok, Irvine, CA (US);
Suming Lai, San Diego, CA (US);
Xuechu Li, Shanghai, CN;
Fuchun Zhan, Shanghai, CN;
Jian Qing, Shanghai, CN;
NXP B.V., Eindhoven, NL;
Abstract
Aspects of the present disclosure are directed to circuitry to control a gate voltage. As may be implemented in accordance with one or more embodiments, a voltage level is controlled for a field effect transistor (FET) having a floating gate and a target operating voltage above which the FET would be overcharged and around which the FET has a nominal operating range. Pulse circuitry is configured to apply energy to the floating gate in pulses, in operation the applied energy being pulsed low relative to the gate's target operating voltage, and then being changed by adjusting successive pulses until the gate reaches the target operating voltage. A feedback circuit samples a voltage level of, and enables the pulse circuitry to apply pulsed energy to, the floating gate for directing operation of the FET based on the target operating voltage in the nominal operating range.