The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Nov. 29, 2018
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Myoung Geun Cha, Seoul, KR;

Sang Gun Choi, Suwon-si, KR;

Joon Woo Bae, Hwaseong-si, KR;

Ji Yeong Shin, Busan, KR;

Yong Su Lee, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/56 (2006.01); H01L 27/32 (2006.01); H01L 21/308 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); H01L 21/308 (2013.01); H01L 27/3246 (2013.01); H01L 27/3272 (2013.01); H01L 27/3276 (2013.01); H01L 51/5237 (2013.01);
Abstract

A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.


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