The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Aug. 25, 2017
Applicant:

Tcl Technology Group Corporation, Huizhou, CN;

Inventors:

Zhurong Liang, Huizhou, CN;

Weiran Cao, Huizhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 33/06 (2010.01); H01L 33/26 (2010.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/502 (2013.01); H01L 33/06 (2013.01); H01L 33/26 (2013.01); H01L 51/0003 (2013.01); H01L 51/5004 (2013.01); H01L 2251/301 (2013.01); H01L 2251/558 (2013.01);
Abstract

A quantum dot light-emitting diode and a display apparatus comprising the quantum dot light-emitting diode are provided. The quantum dot light-emitting diode comprises an anode, a hole injecting layer, a hole transporting layer, a quantum dot light-emitting layer, an electron transporting layer and a cathode from bottom to top, wherein the materials of the quantum dot light-emitting layer contain quantum dots and CuSCN nano-particles. By blending quantum dots and CuSCN nano-particles into a membrane to prepare a quantum dot light-emitting layer, a hole trap state on the surface of the quantum dots is passivated, and the transporting effect of a hole is improved, so that the injection of holes in the quantum dot light-emitting diode and that of electrons achieve balance, and thus the light-emitting efficiency and stability are improved.


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